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USA1J 1189AGL ZMM3V0 MC3406 TFS1237C LBN10006 3JZ41 NTE23
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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4544
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) *Small Collector Ouptut Capacitance
APPLICATIONS *High voltage switching and amplifier applications. *Color TV horizontal driver applications. *Color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w
ww
scs .i
UNIT 300 V 300 V 7 V 0.1 A 50 mA 8 W
.cn mi e
IB
Base Current-Continuous Collector Power Dissipation @TC=25
PC Collector Power Dissipation @Ta=25 TJ Junction Temperature 2
150
Tstg
Storage Temperature
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4544
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
300
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 240V ; IE= 0
1.0
A
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
w w
w.
sem isc
IC= 4mA ; VCE= 10V IC= 20mA ; VCE= 10V IE= 0; VCB= 20V; f= 1MHz IC= 20mA ; VCE= 10V
.cn i
20 30 3.0 50 70
1.0
A
200
pF
MHz
isc Websitewww.iscsemi.cn
2


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